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20156111. A method for growing a crystal of silicon carbide by a solution method using a crucible formed of SiC as a main component, as a container for a Si—C solution, comprising adding, to the Si—C solution, a metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti
•A seed crystal is placed at the interface and the melt cooled while the seed is drawn out to form the crystal •Crystal size and shape are dictated by drawing rate of seed crystal - color is controlled by dopant atoms such as neodymium (Nd) and cerium (Ce) •Defects in a crystal lattice that cause the shifting of a plane of atoms
Induction heating is most widely used in the melting of metals, zone melting, and heating for pressure shaping. Induction heating is the most advanced contactless method of transmitting electrical energy to the object being heated, converting electrical energy directly into thermal energy.
turbine blade temperature. Among the requirements for a successful application of cast single crystal airfoils is the fundamental understanding of the solidification behaviour of the used superalloys. CMSX-6 is a low density single crystal superalloy, developed by Cannon-Muskegon in conjunction with MTU (1).
2017421The potential benefits of growing the CYLC crystal in microgravity will be studied by the Crystal Growth of Cs2LiYCl6:Ce Scintillators in Microgravity (CLYC-Crystal Growth), a Center for the Advancement of Science in Space (CASIS)-sponsored investigation.
ULVAC's unique approach to utilize the generated heat from within the dry pump body allows the LR/HR/UR series to perform even in the most stringent processes. ULVAC has focused the design efforts into maintaining an extremely uniform high temperature throughout all pump stages making this series pump optimal for CVD and etch applications.
Nd:Ce:Cr:YAG single crystals were grown in DJL-40D model crystal growth furnace with medium frequency induction heating by Czochralski technique from iridium crucible. The influence of the doping concentration of Nd, Ce and Cr ions on the optical quality and the pulse laser performance of the crystal and the technology conditions for growing
2. Heat conduction allows the solid to extend very slightly into the melt, assuring that ample material is pulled out to make the growing crystal ever larger. Crystal growth continues in this way until the entire contents of the crucible have been pulled out and added to the rod. The pull-rate is normally on the order of 1 mm to 10 cm per hour.
Quartz General Material Specification 1. Scope. This material specification concerns single crystal cultured quartz bars intended for use in the fabrication of piezoelectric elements for such applications as timing, frequency control and frequency selection.
CE-MAT is dealing with cost-effective and innovative products for the semiconductor and solar industry. We offer customer specific solutions to your requirements in the areas spare parts, equipment and service. Our program contains the following areas: Ceramic Spray Electrostatic Chucks and consumables for Single Wafer Plasma Etch
A long period of frustration in growing crystals of the alpha crystallins has been bypassed by truncation of terminal segments by Bagneris et al. 26 and independently by us. Bagneris et al. 26 determined structures of truncated alpha crystallin domains from rat and human.
New Design Solutions for Thermal Insulation Systems for High-Temperature Furnaces B. Valentini*, A. Plankensteiner*, C. Grohs* * PLANSEE SE, 6600 Reutte, Austria Abstract The reduction of energy consumption of high-temperature furnaces such as for refractory metals sintering and Sapphire single-crystal growth becomes an important engineering